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| N-CHANNEL 30V - 0.0065 - 95A DPAK STripFETTM II POWER MOSFET TYPE STB95NF03 s s s s STB95NF03 VDSS 30 V RDS(on) <0.007 ID 80 A TYPICAL RDS(on) = 0.0065 STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS D2PAK TO-263 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID() ID IDM(*) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Value 30 30 20 80 80 320 150 1 3.0 720 -55 to 175 Unit V V V A A A W W/C V/ns mJ C Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature EAS (2) Tstg Tj (*) Pulse width limited by safe operating area. (*) Current Limited by Package (1) ISD 95A, di/dt 150A/s, VDD V (BR)DSS, Tj TJMAX. (2) Starting T j = 25 oC, ID = 47.5A, VDD = 25V March 2003 1/9 STB95NF03 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A VGS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 45 A Min. 2 0.0065 Typ. Max. 4 0.0070 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID =45 A Min. Typ. 50 2450 880 170 Max. Unit S pF pF pF VDS = 25V f = 1 MHz VGS = 0 2/9 STB95NF03 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*) Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V RG = 4.7 ID = 47.5 A VGS = 10 V Min. Typ. 20 195 59 18 21 70 Max. Unit ns ns nC nC nC VDD=15V ID=95A VGS=10V SWITCHING OFF(*) Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 20 V RG = 4.7, ID = 47.5 A VGS = 10 V Min. Typ. 35 35 Max. Unit ns ns SOURCE DRAIN DIODE(*) Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 95 A VGS = 0 60 120 4 Test Conditions Min. Typ. Max. 95 320 1.3 Unit A A V ns nC A di/dt = 100A/s ISD = 95 A Tj = 150C VDD = 20 V (see test circuit, Figure 5) (*) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*) Pulse width limited by Tjmax Safe Operating Area Thermal Impedance 3/9 STB95NF03 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB95NF03 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/9 STB95NF03 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB95NF03 D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 7/9 STB95NF03 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 * on sales type 8/9 STB95NF03 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 9/9 |
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